Our microelectronics products enable missions that range from advanced satellite communications and complex astrophysics systems to commercial applications, such as smartphones and ground-based communications infrastructure.
The Northrop Grumman Space Park foundry in Redondo Beach, California, processes hetero-junction bipolar transistor and high electron mobility transistor monolithic microwave and millimeter-wave integrated circuits. The foundry focuses on products that are microscopic, modular, high speed, and low in power consumption and temperature.
Microelectronics Products and Services Datasheet
Before handling, assembling or testing our GaAs MMICs please review our "GaAs IC Die Handling, Assembly and Testing Techniques" application note.
| Part | Description | Frequency (GHz) | Gain (dB) | P1dB (dBm) | PSat (dBm) | Availability |
|---|---|---|---|---|---|---|
| APH668 | GaAs HEMT High Power Amplifier | 71 - 76 | 19 | TBD | 28 | Stock |
| APH670 | GaAs HEMT Medium Power Amplifier | 71 - 76 | 21 | TBD | 25 | Stock |
| APH667 |
GaAs HEMT High Power Amplifier | 81 - 86 | 17 | TBD | 25.5 | Stock |
| APH669 | GaAs HEMT Medium Power Amplifier | 81 - 86 | 16 | 20 | 23.5 | Stock |
| APH482 | HEMT High Power Amplifier | 92 - 96 | 7.5 | 22 | 25 | Stock |
| APH631 | HEMT Power Amplifier | 92 - 96 | 23 | 15 | 18 | Stock |
| APH635 | HEMT Power Amplifier | 92 - 95 | 17 | 20 | 22 | Stock |
| Part | Description | Frequency (GHz) | Gain (dB) | P1dB (dBm) | Psat (dBm) | Form | Availability |
|---|---|---|---|---|---|---|---|
| APN267 | GaN HEMT Distributed Amplifier | 2-18 | 10 | 35 | 38 | Die | Stock |
| APN270 | GaN HEMT Power Amplifier | 9-13.2 | 12 | 39 | 41 | Die | Stock |
| APN252 | GaN HEMT Driver Amplifier | 10-14 | 25.5 | 34 | 38 | Die | Stock |
| APN250 | GaN HEMT Power Amplifier | 10-14 | 13 | 39 | 42 | Die | Stock |
| APN226 | GaN HEMT Power Amplifier | 13-16 | 20 | 36 | 39.5 | Die | Stock |
| APN232 | GaN HEMT Power Amplifier | 13.5-15.5 | 13 | 38.5 | 42 | Die | Stock |
| APN237 | GaN HEMT Dual Channel Power Amplifier | 13.5-15.5 | 12.5 | 40.5 | 44 | Die | Stock |
| APN279 | GaN HEMT Power Amplifier | 16-20.8 | 17 | 39.5 | 42.5 | Die | Stock |
| APN187 | GaN HEMT Power Amplifier | 17-22 | 17 | 40 | 42 | Die/Tab | Stock |
| APN149 | GaN HEMT Power Amplifier | 18-23 | 20 | 38 | 39 | Die/Tab | Stock |
| APN243 | GaN HEMT Power Amplifier | 23-28 | 20 | 38 | 40.5 | Die | Stock |
| APN244 | GaN HEMT Power Amplifier | 23-28 | 21 | 37 | 39 | Die | Stock |
| APN228 | GaN HEMT Power Amplifier | 27-32 | 19.5 | 39 | 41.2 | Die/Tab | Stock |
| APN229 | GaN HEMT Power Amplifier | 27-32 | 20 | 17 | 39 | Die/Tab | Stock |
| APN292 | GaN HEMT Power Amplifier | 27-30 | 20 | 42 | 45.5 | Die | Stock |
| APN311 | GaN HEMT Power Amplifier | 27-31 | 20 | 43 | 45 | Die | Stock |
| APN173 | GaN HEMT Power Amplifier | 34-36 | 19.5 | TBD | 37.5 | Die | Stock |
| APN236 | GaN HEMT Power Amplifier | 34.5-35.5 | 16 | 38 | 40 | Die | Stock |
| APN167 | GaN HEMT Power Amplifier | 43-46 | 20 | 35.5 | 38.5 | Die | Stock |
| APN318 | GaN HEMT Power/Driver Amplifier | 47.2-51.4 | 15 | - | 40 | Die | Pre-Production |
| APN319 | GaN HEMT Power/Driver Amplifier | 47.2-51.4 | 16 | - | 37 | Die | Pre-Production |
| APN352 | GaN HEMT Power/Driver Amplifier | 47-51 | 15.5 | 40 | 40.5 | Die | Stock |
| APN353 | GaN HEMT Power/Driver Amplifier | 47-51 | 14 | 37.5 | 39 | Die | Stock |
| Part | Description | Frequency (GHz) | Gain (dB) | NF (dB) | P1dB (dBm) | Availability |
|---|---|---|---|---|---|---|
| ALP302_0 | InP HEMT Low Noise Amplifier | 17.2 - 21.2 | 33 | 0.8 | Stock | |
| ALP302_A | InP HEMT Low Noise Amplifier | 17.2 - 21.2 | 32.5 | 0.8 | Stock | |
| ALP291 | InP HEMT Low Noise Amplifier | 71 - 86 | 29 | 2.7 | 3 | Stock |
| ALP275 | InP HEMT Low Noise Amplifier | 71 - 96 | > 26 | 3 | 4 | Stock |
| ALP280 | InP HEMT Low Noise Amplifier | 80 - 100 | 29 | 2 | 3 | Stock |
| ALP283 | InP HEMT Low Noise Amplifier | 80 - 100 | 29 | 2.5 | 3 | Stock |
| ALH495 (-LN) | HEMT Low Noise Amplifier | 80 - 100 | 18 | 4.3 | 3 | Stock |
| ALH495 (-GB) | HEMT Gain Block Amplifier | 80 - 100 | 18 | 4.8 | 3 | Stock |
| ALH497 (-LN) | HEMT Low Noise Amplifier | 80 - 100 | 17 | 4.2 | 0 | Stock |
| ALH497 (-GB) | HEMT Gain Block Amplifier | 80 - 100 | 17 | 4.9 | 0 | Stock |
| ALH503 (-LN) | HEMT Low Noise Amplifier | 80 - 100 | 16 | 4.2 | 0 | Stock |
| ALH503 (-GB) | HEMT Gain Block Amplifier | 80 - 100 | 16 | 4.9 | 0 | Stock |
| ALH504 (-LN) | HEMT Low Noise Amplifier | 82 - 102 | 18 | 4.1 | 3 | Stock |
| ALH504 (-GB) | HEMT Gain Block Amplifier | 82 - 102 | 18 | 4.8 | 3 | Stock |
| ALP292 | InP HEMT Low Noise Amplifier | 90 - 112 | 30 | 3 | 3 | Stock |
| ALH394 | HEMT Low Noise Amplifier | 92 - 96 | 17 | 5 | 5 | Stock |
| Part | Description | RF Freq (GHz) | LO Freq (GHz) | IF Freq (GHz) | CL (dB) | Availability |
|---|---|---|---|---|---|---|
| MDJ183 | InP Schottky Diode Mixer | 17 - 32 | 17 - 32 | DC-10 | 8 | Pre-Production |
| MDJ169 | InP Schottky Diode Mixer | 24 - 44 | 24 - 44 | DC-15 | 7.5 | Pre-Production |
| MDJ178 | InP Schottky Diode Mixer | 37 - 61 | 37 - 61 | DC-15 | 8.5 | Pre-Production |
| MDJ187 | InP Schottky Diode Mixer | 40 - 76 | 40 - 76 | DC-25 | 9 | Pre-Production |
| MBH100 | HEMT Schottky Diode Mixer | 91 - 99 | 91 - 99 | DC-3 | 12 | Stock |
| MDJ191 | InP Schottky Diode Mixer | 92 - 97 | 92 - 97 | DC-20 | 8.5 | Pre-Production |
| Part | Description | Freq Out (GHz) | Freq In (GHz) | RF Input (dBm) | CG/CL/IL(dB) | Availability |
|---|---|---|---|---|---|---|
| SF0083 | SLCFET SPDT Switch | 0.5 – 25 | NA | NA | 0.38 / IL | Stock |
| XDH150 | HEMT X2 Multiplier | 92 - 96 | 46 - 48 | -5 | 3 / CG | Stock |
| SDH148 | HEMT SPDT Switch | 80 - 100 | NA | NA | 3 / IL | Stock |
| Part | Description | Frequency (GHz) | Gain (dB) | NF (dB) | P1dB (dBm) | Psat (dBm) | Form | Availability |
|---|---|---|---|---|---|---|---|---|
| MLA1101 | 140 GHz Low Noise Amplifier | 130-140 | 20 | 6 | TBD | TBD | Waveguide Module | Stock |
| MGA2101 | 225-325 GHz Gain Block Module | 225-325 | 16 | 8 | TBD | 0 | Waveguide Module | Stock |
| Parameter/ Technology | 1um | 0.8 um | 0.6 um | 0.15 um | 0.1 um | 0.1 um | 0.2 um |
| power InP | digital InP | digital InP | GaAs Power | GaAs | InP | GaN | |
| HBT | HBT (2Met) | HBT (4Met) | PHEMT | PHEMT | PHEMT | HEMT | |
| Ft (peak) | 80 GHz | 160 GHz | >250 GHz | 80 GHz | 120 GHz | 180 GHz | 60 GHz |
| Fmax (peak) | 150 GHz | >200 GHz | >300 GHz | 200 GHz | 250 GHz | 350 GHz | 200 GHz |
| Beta/Gm | 25 | 80 | 80 | 550 | 650 | 1200 | 350 |
| mS / mm | mS / mm | mS / mm | mS / mm | ||||
| Vce / Vds (Max) | 7.5V | 5V | 4V | 5V | 4V | 1.2V | 28V |
| Current Density (Max) | 0.7 | 1.5 | 2.5 | 250 | 250 | 150 | 250 |
| mA / um² | mA / um² | mA / um² | mA / mm | mA / mm | mA/ mm | mA / mm | |
| Wafer Thickness | 75 um | 75 um | 75 um | 50 & 100 um | 50 & 100 um | 75 um | 100 um |
| Airbridged Metal Available | Yes | Yes | Yes | Yes | Yes | Yes | Yes |
| Backside Vias | Yes | Yes | Yes | Yes | Yes | Yes | Yes |
| Diode Type | Schottky | Schottky | Schottky | Gate Source | Gate Source | Gate Source | NA |
| Wafer Size | 100 mm | 100 mm | 100 mm | 100 mm | 100 mm | 100 mm | 100 mm |
| Highlight/ Application | • Mixed Signal designs | • Fiber Optic applications up to 25 Gbps | • Fiber Optic applications up to 40 & 100 Gbps | • High power amps < 5W up to 60 GHz | • Low Noise Amplifier up to 100 GHz | • Very Low noise Amplifiers | • Very high power amplifiers < 10W up to 40 GHz |
| • ADC/DAC | • High Speed digital circuitry | • High Speed digital circuitry | • Linear amplifiers | • Power amplifiers < 1W up to 100 GHz | • mmW sensors | ||
| • Driver amplifiers | • Low power dissipation | ||||||
| • Up/Dwn cnverters | • Up/Dwn cnverters | ||||||
| Commercial Qualification Date | TBD | NOW | NOW | NOW | NOW | NOW | Q3 2015 |
We offer a variety of tools including design kits and manuals to help our customers build the product they need.
| Technology | ADS* | AWR | Spice | Cadence | GDSII | Design Manual |
|---|---|---|---|---|---|---|
| 4mil GaAs 0.1um Low Noise | 11-2006 | 7-2011 | NA | V1.7 | 2008 | |
| 2mil GaAs 0.1um Power | 1-2007 | 7-2011 | NA | ? | 2008 | |
| 4mil GaAs 0.1um Power | 8-2010 | 7-2011 | NA | V1.7 | 2008 | |
| 4mil GaAs 0.15um | 6-2011 | 7-2011 | NA | V1.7 | 2006 | |
| 2mil GaAs 0.15um | 9-2008 | 7-2011 | NA | ? | 2006 | |
| InP HBT: IH2 – Digital | 11-2009 | NA | 11-2009 | V1.2 | TBD | |
| InP HBT: IH2-Power | TBD | NA | TBD | V1.2 | TBD | |
| InP HBT: IH4 | 9-2009 | NA | 11-2009 | V1.5 | TBD | |
| InP HEMT | 7-2011 | TBD | NA | ? | TBD | |
| GaN 0.25um | 3-2011 | TBD | NA | V1.7 | 2009 (Draft) |
Northrop Grumman was awarded the State-of-the-Art Radio Frequency Gallium Nitride (Starry Nite) program in Dec. 2021. As a part of the Starry Nite program, Northrop Grumman will mature a 90 nm Gallium Nitride node capable of W-band operation to manufacturing readiness level (MRL) 8. Throughout the program, foundry access to the 90 nm GaN node will be provided to external and internal designers through multi-project wafer (MPW) runs.
The 90 nm GaN technology is not a frozen process. Three model updates are planned during the program. Preliminary technology performance parameters are provided in the table.
Items of note:
| Technology | fT (GHz) | fmax (GHz) | Gm (mS/mm) | VDS,max (V) | Imax (A/mm) | Wafer Thickness (µm) | Airbridged Metal Available | Backside Vias | Wafer Size (mm) |
|---|---|---|---|---|---|---|---|---|---|
| 90 nm GaN HEMT | 100 | >250 | 525 | 15 - 18 | 1.2 | 50 um | Yes | Yes | 100 |
STARRY NITE MPWs |
2024 |
2025 |
|||||||||||||||||||||||||
| Q1 | Q2 | Q3 | Q4 | Q1 | Q2 | Q3 | Q4 | ||||||||||||||||||||
| Foundry | Process | Offering | Name | Jan | Feb | Mar | Apr | May | Jun | Jul | Aug | Sep | Oct | Nov | Dec | Jan | Feb | Mar | Apr | May | Jun | Jul | Aug | Sep | Oct | Nov | Dec |
NG |
GaN09 | 90nm | MPW1 | ||||||||||||||||||||||||
| MPW2 | |||||||||||||||||||||||||||
| MPW3 | |||||||||||||||||||||||||||
| MPW4 | 24 | ||||||||||||||||||||||||||
| MPW5 | 23 | 18 | |||||||||||||||||||||||||
| MPW7 | 1 | 9 | 18 | 11 | |||||||||||||||||||||||
| MPW9 | 9 | 7 | 16 | 18 | |||||||||||||||||||||||
| GaN09 +AIC | MPW6 | 27 | 24 | 16 | 12 | ||||||||||||||||||||||
| MPW8 | 16 | 14 | 6 | 1 | |||||||||||||||||||||||
| GaN09-LN | MPW1-LN | 26 | 25 | 3 | 24 | ||||||||||||||||||||||
| MPW2-LN | 1 | 9 | 18 | 11 | |||||||||||||||||||||||
| MPW3-LN | 6 | 3 | 14 | 8 | |||||||||||||||||||||||
| MPW4-LN | 27 | 25 | 3 | ||||||||||||||||||||||||
| GaN09-LN +AIC | MPW5-LN | 22 | 19 | 12 | |||||||||||||||||||||||
| MPW6-LN | 31 | 21 | |||||||||||||||||||||||||
STARRY NITE MPWs |
2026 |
2027 |
|||||||||||||||||||||||||
| Q1 | Q2 | Q3 | Q4 | Q1 | Q2 | Q3 | Q4 | ||||||||||||||||||||
| Foundry | Process | Offering | Name | Jan | Feb | Mar | Apr | May | Jun | Jul | Aug | Sep | Oct | Nov | Dec | Jan | Feb | Mar | Apr | May | Jun | Jul | Aug | Sep | Oct | Nov | Dec |
NG |
GaN09 | 90nm | MPW1 | ||||||||||||||||||||||||
| MPW2 | |||||||||||||||||||||||||||
| MPW3 | |||||||||||||||||||||||||||
| MPW4 | |||||||||||||||||||||||||||
| MPW5 | |||||||||||||||||||||||||||
| MPW7 | |||||||||||||||||||||||||||
| MPW9 | |||||||||||||||||||||||||||
| GaN09 +AIC | MPW6 | ||||||||||||||||||||||||||
| MPW8 | |||||||||||||||||||||||||||
| GaN09-LN | MPW1-LN | ||||||||||||||||||||||||||
| MPW2-LN | |||||||||||||||||||||||||||
| MPW3-LN | |||||||||||||||||||||||||||
| MPW4-LN | 26 | ||||||||||||||||||||||||||
| GaN09-LN +AIC | MPW5-LN | 9 | |||||||||||||||||||||||||
| MPW6-LN | 20 | 15 | |||||||||||||||||||||||||
The steps for the MPW runs are:
| Revision | Title |
|---|---|
| Jun. 2008 | 94 GHz Chipset |
| Apr. 2008 | 94 GHz Selector Guide |
| Apr. 2008 | GaAs IC Die Handling, Assembly and Testing Techniques |
| Apr. 2008 | Effects of Hydrogen on Hermetically Packaged GaAs MMICs |
| May 2012 | GaN Chip Handling, Assembly and Testing Techniques |
| Jun. 2024 | Die on Tab Datasheet |
| Date | Title |
|---|---|
| 2003 | Highly Linear and Compact MMW Phased Array Transmitters |
| Date | Forum | Title |
|---|---|---|
| 2002 | GaAs MANTECH | GaAs Components for 60 GHz Wireless Communications Applications |
| 2001 | GaAs MANTECH | High-Reliability Deep Submicron GaAs Pseudomorphic HEMT MMIC Amplifiers |
| 1999 | IEEE RFIC Symposium | High Reliability Non-Hermetic 0.15 um GaAs Pseudomorphic HEMT MMIC Amplifiers |
The following table lists the materials and substances that are present/not present in our products and processes.
This information is provided to assure our customers of the environmental impact of selecting products manufactured by Northrop Grumman.
| Banned Substances | MMIC | GaAs Fabrication Process | MMIC | InP Fabrication Process |
|---|---|---|---|---|
| Asbestos | 0 ppm | 0 ppm | 0 ppm | 0 ppm |
| Azo Dye | 0 ppm | 0 ppm | 0 ppm | 0 ppm |
| Cadmium and Cadmium Compounds | 0 ppm | 0 ppm | 0 ppm | 0 ppm |
| Chlorofluorcarbons (CFCs)/ Hydrochlorofluorocarbons (HCFC) | 0 ppm | 0 ppm | 0 ppm | 0 ppm |
| Ethylene Glycol Monomethyl Ether and its acetate | 0 ppm | 0 ppm | 0 ppm | 0 ppm |
| Ethylene Glycol Monoethyl Ether and its acetate | 0 ppm | 0 ppm | 0 ppm | 0 ppm |
| Halogenated dioxins and furans | 0 ppm | 0 ppm | 0 ppm | 0 ppm |
| Hexavalent Chromium and Hexavalent Chromium Compounds | 0 ppm | 0 ppm | 0 ppm | 144,000 ppm |
| Lead and Lead Compounds | 0 ppm | 0 ppm | 0 ppm | 0 ppm |
| Soldering with Lead | 0 ppm | 0 ppm | 0 ppm | 0 ppm |
| Mercury and Mercury Compounds | 0 ppm | 0 ppm | 0 ppm | 0 ppm |
| Short Chain Chlorinated Paraffins (C10-13, CI>50%) | 0 ppm | 0 ppm | 0 ppm | 0 ppm |
| Perfluorooctanesiltonic Acids (PFOSs)/ Perfluorooctanoic Acids (PFOAs) | 0 ppm | 0 ppm | 0 ppm | 0 ppm |
| Polybrominated Biphenyls (PBBs)/ Polybrominated Biphenyls Ethers (PBDEs) | 0 ppm | 0 ppm | 0 ppm | 0 ppm |
| Polychlorinated Biphenyls(PCBs) | 0 ppm | 0 ppm | 0 ppm | 0 ppm |
| Polychloroterphenyls and directives (PCTs) | 0 ppm | 0 ppm | 0 ppm | 0 ppm |
| Radioactive Materials | 0 ppm | 0 ppm | 0 ppm | 0 ppm |
| Tributyl tin (TBT) and Triphenyl tin (TPT) compounds | 0 ppm | 0 ppm | 0 ppm | 0 ppm |
*Northrop Grumman MPS reserves the right to update this list from time to time as products and services are changed or upgraded.
Last Updated 5/5/2008
Microelectronics Products and Services (MPS) provides commercial access to Northrop Grumman's state-of-the-art Advanced Semiconductor Foundry. The foundry has a history of facilitating technological advancements that have allowed Northrop Grumman to redefine the commercial telecommunications industry.
MPS continues to lead the way forward by leveraging its expertise in GaAs, InP, and GaN technologies to provide discriminating MMICs in wireless E-band telecom, W-band radar, and satcom high power amplifiers.
MPS is committed to quality and reliability across its vertically integrated semiconductor value chain, from raw materials and design to fabrication and testing.
These technologies have been developed with the goal of delivering a proven reliable product useable in defense critical applications. As such commercial companies can benefit from this commitment to quality and reliability. This commitment begins with the raw material (as Northrop performs its own epitaxial growth) thru design, fabrication and even in testing. Northrop Grumman's vertically integrated development process allows for a holistic view of reliability and quality.
Microelectronic Products and Services
Northrop Grumman Space Systems
One Space Park, D1/1024
Redondo Beach, CA 90278
USA
Telephone: +1-310-814-5000
Fax: +1-310-812-7011
Sales Inquiries: as-mps.sales@ngc.com
Contact Product Support: as-mps.sales@ngc.com
